Ion beam synthesis and characterization of thin SiC surface layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Silicon carbide: synthesis and processing
2. Characteristics of the synthesis of β-SiC by the implantation of carbon ions into silicon
3. Investigation of structure and phase transformations in silicon implanted with 12C+ at room temperature
4. Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis
5. Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-07
2. Crystallization of β-SiC in thin SiC x layers (x = 0.03−1.40) synthesized by multiple implantation of carbon ions into silicon;Technical Physics;2011-02
3. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-03
4. AN INFLUENCE OF PLASMA TREATMENT ON STRUCTURE PROPERTIES OF THIN SiC FILMS ON Si;High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes);2010
5. High-energy heavy ion beam annealed ion-implantation-synthesized SiC nanocrystallites and photoluminescence;2010 3rd International Nanoelectronics Conference (INEC);2010-01
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