Investigation of structure and phase transformations in silicon implanted with 12C+ at room temperature
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. FORMATION OF SiC IN SILICON BY ION IMPLANTATION
2. Characteristics of the synthesis of β-SiC by the implantation of carbon ions into silicon
3. The structure of silicon carbide synthesized in diamond and silicon by ion implantation
4. Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions
5. Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon
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1. Crystallization of β-SiC in thin SiC x layers (x = 0.03−1.40) synthesized by multiple implantation of carbon ions into silicon;Technical Physics;2011-02
2. AN INFLUENCE OF PLASMA TREATMENT ON STRUCTURE PROPERTIES OF THIN SiC FILMS ON Si;High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes);2010
3. Diffusion of Pb in carbon ion-implanted silicon: Discovery of a new crystalline phase after electron beam annealing;Vacuum;2008-06
4. Structure properties of carbon implanted silicon layers;Journal of Materials Science: Materials in Electronics;2008-01-19
5. Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing;Applied Physics Letters;2006-10-09
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