Diffusion of Pb in carbon ion-implanted silicon: Discovery of a new crystalline phase after electron beam annealing
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference40 articles.
1. SOI structures produced by oxygen ion implantation and their annealing behaviour
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4. Characteristics of the synthesis of β-SiC by the implantation of carbon ions into silicon
5. Synthesis of β-SiC Layer in Silicon by Carbon Ion `Hot' Implantation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture;Applied Surface Science;2014-09
2. Dual N/Pb ion-implanted Si: Temperature dependence of the novel shift of the Pb peak under electron beam annealing;Applied Surface Science;2011-03
3. Diffusion of Pb in (100) Si under electron beam annealing following dual ion implantations of Pb/Ne, Pb/O and Pb/N;Vacuum;2010-04
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