Transmission electron microscopy investigation of the crystal-amorphous-polycrystal transition in silicon during bismuth room temperature ion implantation-Reference-Cited by-同舟云学术

Transmission electron microscopy investigation of the crystal-amorphous-polycrystal transition in silicon during bismuth room temperature ion implantation

Published:1997-11 Issue:3 Volume:132 Page:418-424
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Fauré J.,Angelov Ch.,Kalitzova M.,Simov S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

1. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

2. Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model

3. Some observations on the amorphous to crystalline transformation in silicon

4. Incorporation of implanted In and Sb in silicon during amorphous layer regrowth

5. Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization

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