Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pb+and Bi+Ions-Reference-Cited by-同舟云学术

Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pb+and Bi+Ions

Published:2001-10-15 Issue:Part 1, No. 10 Volume:40 Page:5841-5849
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kalitzova Maria,Zollo Giuseppe,Yankov Rossen,Angelov Christo,Simov Stephan,Pizzuto Cesare,Faure Joel,Kilian Lilian,Bonhomme Pierre,Manno Daniela,Voelskow Matthias,Vitali Gianfranco

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

2. High frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(100) matrix;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-02

3. Precipitation of superstructured nano-crystals in high-dose implanted Si: an XHRTEM study;Journal of Physics D: Applied Physics;2004-09-16

4. High-resolution electron microscopy of Zn- and Bi-related superlattices in ion implanted (100) Si;Journal of Materials Science: Materials in Electronics;2003

5. Microstructural changes and optical properties of laser annealed bismuth-implanted silicon;Vacuum;2002-12