High frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(100) matrix-Reference-Cited by-同舟云学术

High frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(100) matrix

Published:2005-02 Issue:1 Volume:229 Page:65-72
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kalitzova Maria,Gesheva Kostadinka,Vlakhov Emil,Marinov Yordan,Gogova Daniela,Ivanova Tatyana,Angelov Christo,Pashov Nikolai,Zollo Giuseppe,Vitali Gianfranco

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference30 articles.

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4. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition

5. Metastable solid solutions of antimony in (100) silicon

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1. Te+ implanted silicon structure and electrical resistance dependence on high frequency electromagnetic field annealing;Journal of Physics: Conference Series;2008-05-01

2. Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing;Applied Physics A;2008-03-14

3. Surface modification of single crystal silicon by Ar+ ion implantation and vacuum deposition of amorphous carbon coating;Surface and Coatings Technology;2006-05

4. The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation;Applied Surface Science;2006-04

5. Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01