Thermally induced interfacial interactions between various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition-Reference-Cited by-同舟云学术

Thermally induced interfacial interactions between various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition

Published:2007-08 Issue:2-3 Volume:104 Page:350-355
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Awad Y.,El Khakani M.A.,Aktik C.,Mouine J.,Camiré N.,Lessard M.,Scarlete M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

2. Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-enhanced chemical vapor deposition

3. Linear dependence of both the hardness and the elastic modulus of pulsed laser deposited a-SiC films upon their Si–C bond density

4. Physics of low density-of-states a-Si1−xCx films

5. Wide optical band gap window layers for solar cells

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4. Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition;Thin Solid Films;2010-03

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