Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1367398
Reference20 articles.
1. Blue light emission from a-C:H by thin film electroluminescence structure cell
2. The effects of process pressure and microwave power on the properties of boron-doped SiC: H films prepared using the ECR-CVD technique
3. Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an electron cyclotron resonance plasma
4. Amorphous and Microcrystalline SiC as New Synthetic Wide Gap Semiconductors
5. Optoelectronic and structural properties of amorphous silicon–carbon alloys deposited by low-power electron-cyclotron resonance plasma-enhanced chemical-vapor deposition
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1. Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films;Thin Solid Films;2012-10
2. Effect of Substrate Temperature on (Micro/Nano)Structure of a-SiC:H Thin Films Deposited by Radio-Frequency Magnetron Sputtering.;The Journal of Physical Chemistry C;2012-09-20
3. Local structural analysis of a-SiCx:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar;Diamond and Related Materials;2011-03
4. The parameters of electron cyclotron resonance/radio-frequency hybrid hydrogen plasma adjusted by substrate arrangements;Review of Scientific Instruments;2010-03
5. Stability and degradation of plasma deposited boron nitride thin films in ambient atmosphere;Thin Solid Films;2009-11
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