Effect of density on the diffusion barrier property of TiNx films between Cu and Si
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+–p junction diodes
2. Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures
3. Formation, oxidation, electronic, and electrical properties of copper silicides
4. Diffusion barrier property of TaN between Si and Cu
5. Effects of Thermal N 2 Annealing on Passivation Capability of Sputtered Ta(‐N) Layers Against Cu Oxidation
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