High-k ZrO2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference31 articles.
1. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
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3. Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices
4. Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics
5. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
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1. Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors;Crystals;2024-08-25
2. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments;ECS Journal of Solid State Science and Technology;2021-09-01
3. Magnetism of Undoped ZrO2 Nanoparticles Deposited by Plasma-Gas-Condensation Technology;IOP Conference Series: Materials Science and Engineering;2020-01-01
4. Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment;ACS Omega;2019-07-05
5. Interface spacing, stability, band offsets, and electronic properties on a (001) SrHfO3/GaAs interface: First-principles calculations;Journal of Applied Physics;2018-01-14
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