Nonaqueous organic electrolyte for photoelectrochemical etching of gallium nitride surface-Reference-Cited by-同舟云学术

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Nonaqueous organic electrolyte for photoelectrochemical etching of gallium nitride surface

Published:2018-10 Issue: Volume:710 Page:54-58
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Wang Chao,Zhang Miao-Rong,Song Wei-Xing,Peng Hong-Dan,Huang Hui,Wang Zu-Gang,Xi Rui,Pan Ge-Bo

Funder

Key Research Program of Jiangsu Province

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference26 articles.

1. Wet etching of GaN, AIN, and SiC: a review;Zhuang;Mater. Sci. Eng. R-Rep.,2005

2. Neutral anodic etching of GaN for vertical or crystallographic alignment;Schwab;Appl. Phys. Lett.,2015

3. Integrated H2 nano-sensor array on GaN honeycomb nanonetwork fabricated by MEMS-based technology;Zhong;Sens. Actuators, B,2018

4. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism;Zhang;Appl. Surf. Sci.,2017

5. Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte;Gao;J. Alloy. Compd.,2017

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