Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties-Reference-Cited by-同舟云学术

Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties

Published:2022 Issue:4 Volume:14 Page:1459-1467
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Cai¹²,Jin Xin³,Liang Yan¹,Yang Liu¹²,Li Jing⁴,Wang Rui⁵^ORCID,Liu Baodan⁴,Lv Xuewei³,Jiang Xin¹^ORCID

Affiliation:

1. Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China

2. School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China

3. College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China

4. Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Foshan, China

5. Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044, China

Abstract

Well-aligned GaN nanowire array grown by modified HVPE process.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR07753H

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