Achieving highly-efficient H2S gas sensor by flower-like SnO2–SnO/porous GaN heterojunction

Abstract

A flower-like SnO2–SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN, and SnO2–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H2S sensor. Meanwhile, the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150 °C under 50 ppm H2S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor. The lowering working temperature and high sensitivity (23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO2–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability. The simple design strategy of FSS/PGaN-based H2S sensor highlights its potential in various applications.