Neutral anodic etching of GaN for vertical or crystallographic alignment
Author:
Affiliation:
1. Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06520–8286, USA
2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520–8284, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922702
Reference19 articles.
1. Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties
2. Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching
3. Mechanism of Pore Formation on n‐Type Silicon
4. Wet chemical etching survey of III-nitrides
5. Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy
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