Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties
Author:
Affiliation:
1. imec, Kapeldreef 75, 3001 Leuven, Belgium
2. Department of Physics and Astronomy, K.U. Leuven, 3001 Leuven, Belgium
3. Centre of Surface Chemistry and Catalysis, K.U. Leuven, 3001 Leuven, Belgium
Funder
WaterstofNet
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp508314q
Reference37 articles.
1. Electrochemical Photolysis of Water at a Semiconductor Electrode
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3. SiC: A Photocathode for Water Splitting and Hydrogen Storage
4. Band-Edge Potentials of n-Type and p-Type GaN
5. Enhanced Photocatalytic Activity of Nanoroughened GaN by Dry Etching
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