Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching-Reference-Cited by-同舟云学术

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Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching

Published:2013-08-13 Issue:33 Volume:117 Page:16890-16895
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Schwab Mark J.¹,Chen Danti²,Han Jung²,Pfefferle Lisa D.¹

Affiliation:

1. Department of Chemical and Environmental Engineering, Yale University, P.O. Box 208286, New Haven, Connecticut 06520-8286, United States

2. Department of Electrical Engineering, Yale University, P.O. Box 208267, New Haven, Connecticut 06520-8267, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp401890d

Reference24 articles.

1. Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire

2. High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

3. Investigation of structural and optical properties of nanoporous GaN film

4. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

5. Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate

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