A Novel MESFET structure by U-shape buried oxide for improving the DC and RF Characteristics
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Super junction LDMOS with P-trench and stepped buried oxide layer for high performance;Superlattices and Microstructures;2019-01
2. Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics;Superlattices and Microstructures;2017-11
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