Author:
Shahnazarisani Hadi,Orouji Ali A.,Anvarifard Mohammad K.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Kesilmiş, Z., Avc, M., Aksoy, M.: An operational trans conductance amplifier with 45 nm FINFET technology. CiteSeerX Scientific Literature Digital Library (2011)
2. Jaju, V., Dalal, V.: Silicon-on-insulator technology. EE 530, Advances in MOSFETs, pp. 1–12 (2004)
3. Esseni, D., Mastrapasqua, M., Celler, G.K., Fiegna, C., Selmi, L., Sangiorgi, E.: Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep sub micrometer technology application. IEEE Trans. Electron Devices 48(12), 284 2–285 0 (2001)
4. Cristoloveanu, S.: Trends in SOI technology: hot and green. J. Korean Phys. Soc. 58(5), 146 1–146 7 (2011)
5. Vandersand, J., Kushner, V., Yane, J., Blalock, B., Thornton, T.: CMOS compatible SOI MESFETs for extreme environment applications. In: Proc. Aerosp. Conf., pp. 1–7 (2005)
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献