Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes-Reference-Cited by-同舟云学术

Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes

Published:2015-06 Issue: Volume:82 Page:269-286
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Kadaoui Mustapha Amine,Bouiadjra Wadi Bachir,Saidane Abdelkader,Belahsene Sofiane,Ramdane Abderrahim

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference70 articles.

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3. Electrical properties and current transport mechanisms of the Au/n-GaN Schottky structure with solution-processed high-k BaTiO3 interlayer;Reddy;J. Electron. Mater.,2014

4. Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts;Yam;Physica B,2008

5. Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes;Diale;Physica B,2009

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