Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Metal semiconductor field effect transistor based on single crystal GaN
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. Schottky barrier properties of various metals on n-type GaN
4. A review of the metal–GaN contact technology
5. Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Preparation of porous InAlGaN/Si(111) by photoelectrochemical etching for high performance hydrogen gas sensors at room temperature;Sensors and Actuators B: Chemical;2015-07
2. Porous Si Based Al Schottky Structures on p+-Si: A Possible Way for Nano Schottky Fabrication;Electrochimica Acta;2015-06
3. Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes;Superlattices and Microstructures;2015-06
4. Photoelectrochemical Fabrication of Porous GaN and Their Applications in Ultraviolet and Ammonia Sensing;Japanese Journal of Applied Physics;2013-08-01
5. Nanoporous GaN–Ag Composite Materials Prepared by Metal-Assisted Electroless Etching for Direct Laser Desorption-Ionization Mass Spectrometry;ACS Applied Materials & Interfaces;2013-06-27
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