Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes-Reference-Cited by-同舟云学术

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Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

Published:2009-12 Issue:22 Volume:404 Page:4415-4418
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Diale M.,Auret F.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. The Effect of Series Resistance on the Relationship Between Barrier Heights and Ideality Factors of Inhomogeneous Schottky Barrier Diodes

2. Metal–Semiconductor Contacts;Rhoderick,1988

3. Physics of Semiconductor Devices;Sze,1981

4. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

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