Effect of plasma process on n-GaN surface probed with electrochemical short loop-Reference-Cited by-同舟云学术

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Effect of plasma process on n-GaN surface probed with electrochemical short loop

Published:2023-10 Issue: Volume:6 Page:100041
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Pernel Carole^ORCID,Berthou William,Suman Sidharth,Ruel Simon,Vauche Laura

Funder

Bpifrance

Publisher

Elsevier BV

Reference21 articles.

1. Depth and thermal stability of dry etch damage in GaN Schottky diodes;Cao;Applied Physics Letters,1999

2. Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy;Cho;Applied Physics Letters,2004

3. Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes;Diale;Physica B: Condensed Matter,2009

4. Atomic layer etching of AlGaN using Cl 2 and Ar gas chemistry and UV damage evaluation;Fukumizu;Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films,2019

5. Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs;He;Applied Surface Science,2021

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