Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness-Reference-Cited by-同舟云学术

Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness

Published:2015-07 Issue: Volume:83 Page:367-375
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Huang Chuan-Xin,Li Jun,Ding Xing-Wei,Zhang Jian-Hua,Jiang Xue-Yin,Zhang Zhi-Lin

Funder

Natural Science Foundation of China

Innovation Fund of shanghai University

Shanghai Municipal Education Commission

China Postdoctoral Science Special Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

3. Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

4. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aqueous solution deposition of amorphous gallium tin oxide for thin-film transistors applications;Ceramics International;2020-08

2. Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness;Solid-State Electronics;2019-03

3. Effect of Annealing Temperature on Electrical Properties and Stability of Si–Zn–Sn–O Thin Film Transistors Under Temperature Stress;Transactions on Electrical and Electronic Materials;2018-01-25

4. Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress;physica status solidi (a);2018-01-24

5. Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition;RSC Advances;2018