Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness-Reference-Cited by-同舟云学术

Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness

Published:2019-03 Issue: Volume:153 Page:93-98
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hwang Jin Young,Lee Sang Yeol

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer;Chiang;Appl Phys Lett,2005

3. Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS;Denny;J Electron Spectrosc Relat Phenom,2012

4. Constant-voltage-bias stress testing of a-IGZO thin-film transistors;Hoshino;IEEE Trans Elect Dev,2009

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature (London),2004

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1. Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors;Coatings;2024-04-30

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3. Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors;Microelectronic Engineering;2022-01

4. Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors;Ceramics International;2021-02