Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition-Reference-Cited by-同舟云学术

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

Published:2018 Issue:44 Volume:8 Page:25014-25020
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yoon So-Jung¹²³⁴^ORCID,Seong Nak-Jin⁵⁶⁴,Choi Kyujeong⁵⁶⁴,Shin Woong-Chul⁵⁶⁴,Yoon Sung-Min¹²³⁴^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics

2. Kyung Hee University

3. Yongin

4. Korea

5. NCD Co. Ltd

6. Daejeon 34015

Abstract

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA03639J

Reference30 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

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