Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE-Reference-Cited by-同舟云学术

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

Published:2019-09 Issue: Volume:133 Page:106209
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Siekacz Marcin,Wolny Paweł,Ernst Torsten,Grzanka Ewa,Staszczak Grzegorz,Suski Tadeusz,Feduniewicz-Żmuda Anna,Sawicka Marta,Moneta Joanna,Anikeeva Mariia,Schulz Tobias,Albrecht Martin,Skierbiszewski Czesław

Funder

Horizon 2020

National Science Centre

Foundation for Polish Science

European Union

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE

2. 60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

3. Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

4. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

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