60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy-Reference-Cited by-同舟云学术

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60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

Published:2006-05-29 Issue:22 Volume:88 Page:221108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Skierbiszewski C.,Wiśniewski P.,Siekacz M.,Perlin P.,Feduniewicz-Zmuda A.,Nowak G.,Grzegory I.,Leszczyński M.,Porowski S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2208929

Reference25 articles.

1. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

2. Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

3. Crystal growth model for molecular beam epitaxy: Role of kinks on crystal growth

4. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

5. Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

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1. Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy;physica status solidi (RRL) – Rapid Research Letters;2021-05-27

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3. Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers;Journal of Crystal Growth;2020-04

4. Indium content dependent VOCs interactions in monolithic InGaN/GaN multi quantum well structures grown by MOCVD;Materials Science in Semiconductor Processing;2019-12

5. Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE;Superlattices and Microstructures;2019-09

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