Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference34 articles.
1. GaN-Based Green Resonant Cavity Light-Emitting Diodes
2. Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
3. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
4. Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
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1. Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition;Journal of Semiconductors;2024-09-01
2. Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film;Journal of Vacuum Science & Technology A;2023-08-10
3. Effects and mechanisms of In surfactant on high Al-content AlGaN grown by plasma-assisted molecular beam epitaxy;Optics Express;2022-01-06
4. Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers;Optik;2019-09
5. Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant;Superlattices and Microstructures;2019-06
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