GaN-Based Green Resonant Cavity Light-Emitting Diodes-Reference-Cited by-同舟云学术

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GaN-Based Green Resonant Cavity Light-Emitting Diodes

Published:2006-04-25 Issue:4B Volume:45 Page:3433-3435
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Shih-Yung,Horng Ray-Hua,Wang Wei-Kai,Wuu Dong-Sing

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes;Semiconductor Science and Technology;2024-05-30

2. Rational Distributed Bragg Reflector Design for Improving Performance of Flip-Chip Micro-LEDs;Electronics;2022-09-23

3. Gallium nitride-based resonant cavity light-emitting diode with single-longitudinal-mode emission;Optics Letters;2022-09-02

4. High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells;IEEE Transactions on Electron Devices;2020-09

5. GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors;ACS Applied Electronic Materials;2020-02-12

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