Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant-Reference-Cited by-同舟云学术

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Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant

Published:2019-06 Issue: Volume:130 Page:396-400
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Fan Aijie,Zhang Xiong,Wu Zili,Zhao Jianguo,Chen Shuai,Chen Hu,Nasir Abbas,Cui Yiping

Funder

Key Research and Development Project of Science and Technology Department of Jiangsu Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Deep-ultraviolet light-emitting diodes;Shur;IEEE Trans. Electron Devices,2010

2. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photon.,2008

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes;Waltereit;Nature,2000

4. Hole conductivity and compensation in epitaxial GaN : Mg layers;Kaufmann;Phys. Rev. B,2000

5. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition;Götz;Appl. Phys. Lett.,1996

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films;Chinese Physics B;2023-12-01

2. Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells;Optics Express;2023-11-07

3. Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film;Journal of Vacuum Science & Technology A;2023-08-10

4. Enhanced performance of (112¯2) plane p-AlGaN grown with indium surfactant;Materials Letters;2022-10

5. Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality;Materials Research Express;2022-10-01

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