Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Growth and characterization of metamorphic In[sub x](AlGa)[sub 1−x]As/In[sub x]Ga[sub 1−x]As high electron mobility transistor material and devices with X=0.3–0.4
2. Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates
3. InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
4. Photoluminescence study of nitrogen effects on confined states in GaAs1−xNxGaAs quantum wells
5. Double-doped In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET on GaAs substrate with 1 W output power
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1. Structural and optical investigations on LaGaO3 synthesis by sol–gel method along with a blue luminescence property;Inorganic Chemistry Communications;2022-09
2. Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis;Scientific Reports;2020-07-27
3. Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects;Superlattices and Microstructures;2016-04
4. Carbon n-δ-doping effects on electronic and optical properties in GaAs/AlGaAs HEMTs;Superlattices and Microstructures;2014-08
5. Strain relaxation in metamorphic InAlAs buffers;Materials Science and Engineering: B;2012-06
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