Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1326045
Reference12 articles.
1. Molecular-beam epitaxial growth and characterization of pseudomorphic GaInAs/AlInAs modulation-doped heterostructures
2. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
3. Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer
4. Molecular beam epitaxy growth of In[sub y2]Al[sub 1−y2]As/In[sub 0.73]Ga[sub 0.27]As/In[sub y1]Al[sub 1−y1]As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
5. Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well
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