Growth and characterization of metamorphic In[sub x](AlGa)[sub 1−x]As/In[sub x]Ga[sub 1−x]As high electron mobility transistor material and devices with X=0.3

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Growth and characterization of metamorphic In[sub x](AlGa)[sub 1−x]As/In[sub x]Ga[sub 1−x]As high electron mobility transistor material and devices with X=0.3–0.4

Published:2000 Issue:3 Volume:18 Page:1638
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hoke W. E.,Lyman P. S.,Whelan C. S.,Mosca J. J.,Torabi A.,Chang K. L.,Hsieh K. C.

Publisher

American Vacuum Society

Subject

General Engineering

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