MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers-Reference-Cited by-同舟云学术

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MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers

Published:2013-05 Issue:3 Volume:31 Page:03C106
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Fastenau Joel M.,Lubyshev Dmitri,Qiu Yueming,Liu Amy W. K.,Koerperick Edwin J.,Olesberg Jon T.,Norton Dennis

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4792516

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2. Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cells;Journal of Applied Physics;2023-06-28

3. Wafer-scale integration of antimonide-based MWIR FPAs;Infrared Technology and Applications XLVII;2021-04-12

4. Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si;Journal of Applied Physics;2021-01-07

5. Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si;Journal of Luminescence;2020-12

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