Double-doped In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET on GaAs substrate with 1 W output power
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/16777/00772379.pdf?arnumber=772379
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1. Metamorphic HEMT Technology Exemplified by InAlAs/InGaAs/GaAs HEMTs;Lattice Engineering;2012-11-27
2. Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures;Superlattices and Microstructures;2011-05
3. Investigations on SiN-Passivated Γ-Gate Al[sub 0.27]Ga[sub 0.73]N∕GaN High Electron Mobility Transistors;Journal of The Electrochemical Society;2010
4. Metamorphic growth of InAlAs/InGaAs MQW and InAs HEMT structures on GaAs;Physica E: Low-dimensional Systems and Nanostructures;2008-08
5. Relieved kink effects in symmetrically graded In0.45Al0.55As∕InxGa1−xAs metamorphic high-electron-mobility transistors;Journal of Applied Physics;2007-12
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