320 × 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice-Reference-Cited by-同舟云学术

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320 × 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice

Published:2017-11 Issue: Volume:111 Page:783-788
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sun Yaoyao,Wang Guowei,Han Xi,Xiang Wei,Jiang Dongwei,Jiang Zhi,Hao Hongyue,Lv Yuexi,Guo Chunyan,Xu Yingqiang,Niu Zhichuan

Funder

National Basic Research Program of China

National Special Funds for the Development of Major Research Equipment and Instruments, China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

2. Advances in mid-infrared detection and imaging: a key issues review

3. Recent progress in infrared detector technologies

4. Properties of Lead Telluride Mid-Infrared Imaging Devices of Focal Plane Arrays

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise equivalent temperature difference study of type-II superlattice MWIR focal plane arrays for high operating temperature performance;Optics Express;2024-07-03

2. Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure;Heliyon;2024-06

3. Investigation of Passivation Pretreatment Processes for Mid‐/Long‐Wavelength Dual‐Band Infrared Focal Plane Arrays Based on Type‐II InAs/GaSb Superlattices;Advanced Engineering Materials;2024-03-18

4. Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook;Journal of Physics D: Applied Physics;2023-07-27

5. High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD;Journal of Semiconductors;2022-01-01

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