Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition-Reference-Cited by-同舟云学术

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Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

Published:2016-05 Issue: Volume:119 Page:1-4
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Martyniuk Piotr,Benyahia Djalal,Kowalewski Andrzej,Kubiszyn Łukasz,Stępień Dawid,Gawron Waldemar,Rogalski Antoni

Funder

Polish National Science Centre

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. State-of-the-art type II antimonide-based superlattice photodiodes for infrared detection and imaging;Razeghi;Proc SPIE,2009

2. InAs/GaSb type-II superlattice detectors;Plis;Adv Electron,2014

3. Type-II superlattice infrared detectors;Ting,2011

4. Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier;Nguyen;Appl Phys Lett,2007

5. Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes;Nguyen;Appl Phys Lett,2008

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1. Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook;Journal of Physics D: Applied Physics;2023-07-27

2. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15

3. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application;Materials Research Bulletin;2021-10

4. MOCVD-grown HgCdTe photodiodes optimized for HOT conditions and a wide IR range;Sensors and Actuators A: Physical;2020-07

5. Influence of GaAs and GaSb substrates on detection parameters of InAs/GaSb superlattice-based mid-infrared interband cascade photodetectors;Applied Optics;2020-04-30

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