Author:
Hao Xiujun,Teng Yan,Zhu He,Liu Jiafeng,Zhu Hong,Huai Yunlong,Li Meng,Chen Baile,Huang Yong,Yang Hui
Abstract
Abstract
We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm2, and a peak specific detectivity of 2.3 × 109 cm·Hz1/2 /W.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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