Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

Author:

Sun Yabin,Fu Jun,Wang Yudong,Zhou Wei,Zhang Wei,Liu Zhihong

Funder

Important National Science & Technology Specific Projects

National Natural Science Funds of China

National Natural Science Funds of Shanghai, China

Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University

Science and Technology Commission of Shanghai Municipality

Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz;Jain,2014

2. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay;Heinemann,2010

3. A new analytical method for robust extraction of the small-signal equivalent circuit for SiGe HBTs operating at cryogenic temperatures;Olvera-Cervantes;IEEE Trans. Microw. Theory Tech..,2008

4. A peeling algorithm for extraction of the HBT small-signal equivalent circuit;Sheinman;IEEE Trans. Microw. Theory Tech.,2002

5. Direct extraction method of HBT equivalent-circuit elements relying exclusively on S-parameters measured at normal bias conditions;Oudir;IEEE Trans. Microw. Theory Tech..,2011

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