Direct determination of strain and composition in InGaAs nano-islands using anomalous grazing incidence x-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
2. Structural and chemical investigation ofIn0.6Ga0.4AsStranski-Krastanow layers buried in GaAs by transmission electron microscopy
3. Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs
4. Direct quantitative measurement of compositional enrichment and variations in InyGa1−yAs quantum dots
5. X-ray scattering studies on InGaAs quantum dots
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1. Quantitative measurement of manganese incorporation into (In,Mn)As islands by resonant x-ray scattering;Physical Review B;2017-12-05
2. Compositional mapping of semiconductor quantum dots and rings;Physics Reports;2011-04
3. Atomic scale characterization of buried InxGa1−xAs quantum dots using pulsed laser atom probe tomography;Applied Physics Letters;2008-06-09
4. Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation;Physical Review B;2008-02-29
5. Strain relaxation and stress-driven interdiffusion in InAs∕InGaAs∕InP nanowires;Applied Physics Letters;2007-08-06
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