Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.86.2381/fulltext
Reference38 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Competing relaxation mechanisms in strained layers
4. Misfit Dislocation Sources at Surface Ripple Troughs in Continuous Heteroepitaxial Layers
5. Growth morphology evolution and dislocation introduction in the heteroepitaxial system
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