Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation

Author:

Kale Sumit,Kondekar P.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Simulation and Extraction of Dual-Gate TFET With Ferroelectric Material to Preserve Data;2024 Fourth International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2024-01-11

2. Suppression of P-I-N forward leakage current in tunnel field-effect transistor;Semiconductor Science and Technology;2023-08-07

3. Design and Investigation of the DM- PC-TFET-Based Biosensor for Breast Cancer Cell Detection;Transactions on Electrical and Electronic Materials;2023-07-01

4. Assessing the Impact of Source Pocket Length Variation to Examine DC/RF to Linearity Performance of DG-TFET;Nano;2023-04

5. Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor;Micromachines;2023-03-20

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