Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability-Reference-Cited by-同舟云学术

Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability

Published:2013-04-01 Issue:4S Volume:52 Page:04CC28
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Yan,Dou Chunmeng,Wei Feng,Kakushima Kuniyuki,Ohmori Kenji,Ahmet Parhat,Watanabe Takanobu,Tsutsui Kazuo,Nishiyama Akira,Sugii Nobuyuki,Natori Kenji,Yamada Keisaku,Kataoka Yoshinori,Hattori Takeo,Iwai Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. VLSI limitations from drain-induced barrier lowering

2. CMOS scaling into the 21st century: 0.1 µm and beyond

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