Deep insight into material-dependent DC performance of Fe DS-SBTFET and its noise analysis in the presence of interface traps

Author:

Ghosh P.,Bhowmick B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference37 articles.

1. Silicon surface tunnel transistor;Reddick;Appl Phys Lett.,1995

2. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron Device Lett,2007

3. Influence of source stack and heterogeneous gate dielectric on band to band tunneling rate of tunnel FET;Karbalaei;Silicon,2019

4. A resonant tunneling field effect transistor utilizing silicene nanoribbon;Salimian;AEU-Int J Electron Commun,2019

5. First principles study of the ambipolarity in a germanene nanoribbon tunneling field effect transistor;Samipour;ECS J Solid State Sci Technol,2019

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