Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET-Reference-Cited by-同舟云学术

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Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET

Published:2023-01-02 Issue:1 Volume:602 Page:204-214
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Saha Rajesh¹,Panda Deepak Kumar²,Goswami Rupam³

Affiliation:

1. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology Jaipur, Jaipur, Rajasthan, India

2. School of Electronics, VIT AP University, Amaravati, Andhra Pradesh, India

3. Department of Electronics and Communication Engineering, Tezpur University, Sonitpur, Assam, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2022.2149315

Reference34 articles.

1. Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

2. Evidence for Enhanced Reliability in a Novel Nanoscale Partially-Depleted SOI MOSFET

3. Drain Extended Tunnel FET—A Novel Power Transistor for RF and Switching Applications

4. A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

5. Demonstration of L-Shaped Tunnel Field-Effect Transistors

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