Noise behavior of vertical tunnel FETs under the influence of interface trap states
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference31 articles.
1. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron. Device Lett.,2007
2. Tunnel field-effect transistors as energy efficient electronic switches;Ionescu;Nature,2011
3. Double-gate tunnel FET with high-Kgate dielectric;Boucart;IEEE Trans. Electron. Dev.,2007
4. Steep subthreshold slope n- and p-type tunnel-FET devices for low-power and energy-efficient digital circuits;Khatami;IEEE Trans. Electron. Dev.,2009
5. Fabrication and analysis of a Si/Si0 .55Ge0.45 heterojunction line tunnel FET;Amey;IEEE Trans. Electron. Dev.,2014
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