A novel double gate metal source/drain Schottky MOSFET as an inverter-Reference-Cited by-同舟云学术

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A novel double gate metal source/drain Schottky MOSFET as an inverter

Published:2016-03 Issue: Volume:91 Page:78-89
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Loan Sajad A.,Kumar Sunil,Alamoud Abdulrahman M.

Funder

King Saud University (KSU)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Design of ion-implanted MOSFETs with very small physical dimensions;Dennard;IEEE J. Solid State Circuits,1974

2. Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: A review;Chaudhry;IEEE Trans. Device Mater. Rel.,2004

3. A novel partial ground plane based MOSFET on selective buried oxide: 2D simulation study;Loan;IEEE Trans. Electron Devices,2010

4. Overview and status of metal S/D Schottky-barrier MOSFET technology;Larson;IEEE Trans. Electron Devices,2006

5. Lightly doped Schottky MOSFET;Koeneke;IEDM Tech. Dig.,1982

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