Numerical study of polarization-doped AlGaN ultraviolet light-emitting diodes
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes
3. Advances in group III-nitride-based deep UV light-emitting diode technology
4. Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
5. Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N
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1. Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters;Materials Science in Semiconductor Processing;2024-08
2. Dislocation density as a factor compensating the polarization doping effect in graded p-AlGaN contact layers;Journal of Alloys and Compounds;2024-05
3. Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure;Crystals;2021-10-06
4. Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes;IEEE Photonics Journal;2021-08
5. The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation;Microelectronics Reliability;2020-12
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