Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications

Published:2017-03 Issue: Volume:103 Page:386-394
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hidouri Tarek,Hamila Radhia,Fraj Ibtissem,Saidi Faouzi,Maaref Hassen,Rodriguez Philippe,Auvray Laurent

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method

2. MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs

3. Electron effective mass and phonon modes in GaAs incorporating boron and indium

4. Theory of conduction band dispersion in diluteBxGa1−xAsalloys

5. Metal insulator transition in n-BGaInAs

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and analysis of Z shaped InGa0.5As0.5/Si tunnel FET using non-equilibrium Green’s function model for hydrogen gas sensing application;Micro and Nanostructures;2023-10

2. Mg Doping of N-Polar, In-Rich InAlN;Materials;2023-03-10

3. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01

4. Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics;Applied Surface Science;2022-03

5. Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP;Materials Science in Semiconductor Processing;2022-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3