Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method-Reference-Cited by-同舟云学术

Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method

Published:2012-09-15 Issue:6 Volume:112 Page:063109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hamila Radhia,Saidi Faouzi,Maaref Hassen,Rodriguez Philippe,Auvray Laurent

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4752031

Reference22 articles.

1. BGaInAs alloys lattice matched to GaAs

2. Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

3. Electronic structure of BAs and boride III-V alloys

4. Spinodal decomposition in the BxGayIn1−x−yAs alloys

5. Electron effective mass and phonon modes in GaAs incorporating boron and indium

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